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1

Three-dimensional integrated circuits

Topol, A. W., Tulipe, D. C. La, Shi, L., Frank, D. J., Bernstein, K., Steen, S. E., Kumar, A., Singco, G. U., Young, A. M., Guarini, K. W., Ieong, M.

Journal:

IBM Journal of Research and Development

Année:

2006

Langue:

english

Fichier:

PDF, 790 KB

english, 2006

2

Wafer-level 3D integration technology

Koester, S. J., Young, A. M., Yu, R. R., Purushothaman, S., Chen, K.-N., La Tulipe, D. C., Rana, N., Shi, L., Wordeman, M. R., Sprogis, E. J.

Journal:

IBM Journal of Research and Development

Année:

2008

Langue:

english

Fichier:

PDF, 420 KB

english, 2008

3

[IEEE 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2012.05.22-2012.05.23)] 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration - Wafer-scale oxide fusion bonding and wafer thinning development for 3D systems integration: Oxide fusion wafer bonding and wafer thinning development for TSV-last integration

Skordas, S., Tulipe, D. C. La, Winstel, K., Vo, T. A., Priyadarshini, D., Upham, A., Song, D., Hubbard, A., Johnson, R., Cauffman, K., Kanakasabapathy, S., Lin, W., Knupp, S., Malley, M., Farooq, M. G

Année:

2012

Fichier:

PDF, 787 KB

2012

4

Positive mode silylation process characterization

D.C. La Tulipe, A.T.S. Pomerene, J.P. Simons, D.E. Seeger

Journal:

Microelectronic Engineering

Année:

1992

Langue:

english

Fichier:

PDF, 325 KB

english, 1992

5

IIA-2 saturable charge FET

Solomon, P.M., Frank, D.J., Baratte, H., La Tulipe, D., Wright, S.L.

Journal:

IEEE Transactions on Electron Devices

Année:

1987

Langue:

english

Fichier:

PDF, 163 KB

english, 1987

6

Process optimization for high electron mobility in nMOSFETs with aggressively scaled HfO/sub 2//metal stacks

Narayanan, V., Maitra, K., Linder, B.P., Paruchuri, V.K., Gusev, E.P., Jamison, P., Frank, M.M., Steen, M.L., La Tulipe, D., Arnold, J., Carruthers, R., Lacey, D.L., Cartier, E.

Journal:

IEEE Electron Device Letters

Année:

2006

Langue:

english

Fichier:

PDF, 152 KB

english, 2006

7

Depletion-mode GaAs SISFET's by selective ion implantation

Baratte, H., Solomon, P.M., La Tulipe, D.C., Jackson, T.N., Frank, D.J., Wright, S.L.

Journal:

IEEE Electron Device Letters

Année:

1987

Langue:

english

Fichier:

PDF, 351 KB

english, 1987

8

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)

Topol, A.W., La Tulipe, D.C., Shi, L., Alam, S.M., Frank, D.J., Steen, S.E., Vichiconti, J., Posillico, D., Cobb, M., Medd, S., Patel, J., Goma, S., DiMilia, D., Robson, M.T., Duch, E., Farinelli, M.,

Année:

2005

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2005

9

Thin-film imaging: Past, present, prognosis

Seeger, D. E., La Tulipe, D. C., Kunz, R. R., Garza, C. M., Hanratty, M. A.

Journal:

IBM Journal of Research and Development

Année:

1997

Langue:

english

Fichier:

PDF, 1.43 MB

english, 1997

10

[IEEE Sixth International Conference Metalorganic Vapor Phase Epitaxy - Cambridge, MA (June 8-11, 1992)] Sixth International Conference Metalorganic Vapor Phase Epitaxy - Improved Schottky Gate Characteristics for MOVPE-Grown GaAs MESFETs

Tischler, M.A., La Tulipe, D.C., Kuech, T.F., Magerlein, J.H., Hovel, H.J.

Année:

1992

Langue:

english

Fichier:

PDF, 146 KB

english, 1992

11

[IRE 1986 International Electron Devices Meeting - ()] 1986 International Electron Devices Meeting - Self-aligned processes for the GaAs gate FET

Baratte, H., La Tulipe, D.C., Knoedler, C.M., Jackson, T.N., Frank, D.J., Solomon, P.M., Wright, S.L.

Année:

1986

Langue:

english

Fichier:

PDF, 341 KB

english, 1986

12

Novel InAs/(Al,Ga)Sb FET with direct gate-to-channel contact

Frank, D.J., La Tulipe, D.C., Munekata, H.

Journal:

IEEE Electron Device Letters

Année:

1991

Langue:

english

Fichier:

PDF, 285 KB

english, 1991

13

[IEEE Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (7-9 Aug. 1989)] Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - S-parameter characterization of GaAs gate SISFETs at liquid nitrogen temperatures

Kwark, Y., Solomon, P., La Tulipe, D.

Année:

1989

Langue:

english

Fichier:

PDF, 469 KB

english, 1989

14

[IEEE 2008 IEEE International SOI Conference - New Paltz, NY (2008.10.6-2008.10.9)] 2008 IEEE International SOI Conference - Upside-down FETS

La Tulipe, D. C., Frnak, D. J., Steen, S.E., Topol, A.W., Patel, J., Ramakrishnan, L., Sleight, J.W.

Année:

2008

Langue:

english

Fichier:

PDF, 99 KB

english, 2008

15

Probe pressure effect on tunneling current through a GaAs-(Al,Ga)As-GaAs heterojunction barrier

Solomon, P. M., Wright, S. L., La Tulipe, D.

Journal:

Applied Physics Letters

Année:

1986

Langue:

english

Fichier:

PDF, 429 KB

english, 1986

16

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. . - Ithaca, NY (August 10-12, 1987)] IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. - Enhance / Deplete GaAs SISFETs

Baratte, H., La Tulipe, D.C., Frank, D.J., Solomon, P.M., Jackson, T.N., Wright, S.L.

Année:

1987

Langue:

english

Fichier:

PDF, 493 KB

english, 1987

17

New phenomena in coupled transport between 2D and 3D electron-gas layers

Solomon, P., Price, P., Frank, D., La Tulipe, D.

Journal:

Physical Review Letters

Année:

1989

Langue:

english

Fichier:

PDF, 677 KB

english, 1989

18

Thermally stable ohmic contacts to n-type GaAs. VIII. Sputter-deposited InAs contacts

Kim, H.-J., Murakami, Masanori, Wright, S. L., Norcott, M., Price, W. H., La Tulipe, D.

Journal:

Journal of Applied Physics

Année:

1990

Langue:

english

Fichier:

PDF, 1.10 MB

english, 1990

19

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

La Tulipe, D.C., Frank, D.J., Munekata, H.

Journal:

MRS Proceedings

Année:

1990

Langue:

english

Fichier:

PDF, 3.76 MB

english, 1990